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  4. Correction to "Broadband Terahertz Power Detectors Based on 90-nm Silicon CMOS Transistors with Flat Responsivity Up to 2.2 THz" [vol 39, pg 1413, 2018]
 
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2019
Journal Article
Title

Correction to "Broadband Terahertz Power Detectors Based on 90-nm Silicon CMOS Transistors with Flat Responsivity Up to 2.2 THz" [vol 39, pg 1413, 2018]

Abstract
In the above paper [1] , the footnote acknowledges financial support received from the Research Council of Lithuania with wrong project number. The statement ""This work was supported by the Research Council of Lithuania under contract TAP LZ-06/2015, EL"" should be read as ""This work was supported by the Research Council of Lithuania under contract LAT-04/2016, EL"".
Author(s)
Ikamas, K.
Cibiraite, D.
Lisauskas, A.
Bauer, M.
Krozer, V.
Roskos, H.G.
Journal
IEEE Electron Device Letters  
Project(s)
CELTA
Funder
European Commission EC  
DOI
10.1109/LED.2018.2889431
Language
English
Fraunhofer-Institut für Techno- und Wirtschaftsmathematik ITWM  
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