Imaging Interstitial Iron Concentrations in Gallium-Doped Silicon Wafers

In this work, the established method of iron imaging is transferred from B‐doped silicon to Ga‐doped material. For this purpose, the pairing and splitting conditions are investigated and a preparation procedure suggested that ensures a sufficient fraction of iron-gallium pairing and splitting, respectively. Furthermore the defect parameters available in literature are compared and evaluated for a suitable description of the injection dependent carrier lifetime measurements. A parameter set that enables a coherent and adequate iron evaluation is suggested. Thus, a robust method for spatially resolved determination of the interstitial iron concentration in Ga‐doped silicon wafers is presented.