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  4. Large-signal modeling of a scalable high-Q AlGaN/GaN high electron-mobility varactor
 
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2019
Journal Article
Titel

Large-signal modeling of a scalable high-Q AlGaN/GaN high electron-mobility varactor

Abstract
In this paper, a new large-signal model for gallium nitride high electron-mobility varactors is presented. Compared to former models, this model is scalable and describes the whole range of operation from breakdown to forward conduction. The model consists of a passive parasitic shell, an ideal intrinsic core, and takes dispersion into account. The main extraction is done on an eight-finger device with a tuning ratio of 4.3 and a minimum quality factor Q above 30 for frequencies below 2 GHz. The model is verified for a large range of bias points and frequencies. Load-pull measurements provide evidence even at high RF input power up to 23 dBm.
Author(s)
Ambacher, Oliver
Fraunhofer-Institut fĂ¼r Angewandte Festkörperphysik IAF
Amirpour, Raul
Fraunhofer-Institut fĂ¼r Angewandte Festkörperphysik IAF
Brueckner, Peter
Fraunhofer-Institut fĂ¼r Angewandte Festkörperphysik IAF
Quay, RĂ¼diger
Fraunhofer-Institut fĂ¼r Angewandte Festkörperphysik IAF
Raay, Friedbert van
Fraunhofer-Institut fĂ¼r Angewandte Festkörperphysik IAF
Schwantuschke, Dirk
Fraunhofer-Institut fĂ¼r Angewandte Festkörperphysik IAF
Zeitschrift
IEEE transactions on microwave theory and techniques
Thumbnail Image
DOI
10.1109/TMTT.2018.2890472
Language
English
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Fraunhofer-Institut fĂ¼r Angewandte Festkörperphysik IAF
Tags
  • dispersion

  • gallium nitride (GaN)...

  • high electron-mobilit...

  • modeling

  • varactor

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