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  4. Optimization of GaAs solar cell performance and growth efficiency at MOVPE growth rates of 100 mm/h
 
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2018
Journal Article
Title

Optimization of GaAs solar cell performance and growth efficiency at MOVPE growth rates of 100 mm/h

Abstract
III-V devices outperform all other solar cells in terms of efficiency. However, the manufacturing of these cells is expensive and prevents their use in a number of applications, which would benefit from the high efficiency. A major contribution to the cost is the metal-organic vapor phase epitaxy process for the III-V compounds. Increasing growth rates and, hence, machine throughput, as well as the growth efficiency, are important steps toward reducing the cost of III-V solar cells. We demonstrate the growth of GaAs solar cells at extremely high growth rates of 100 mm/h and achieve a VOC of 1.028 V, a base diffusion length of 6.5 mm, and an efficiency of 23.6% under AM1.5g conditions. Furthermore, we show reactor adjustments leading to growth rates up to 140 mm/h and reach conditions where more than half of the Ga from the precursor is incorporated into the solar cell layers. The results are encouraging and demonstrate a pathway toward lower cost III-V solar cell manufacturing.
Author(s)
Lang, Robin  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Schön, Jonas  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Dimroth, Frank  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Lackner, David  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Journal
IEEE Journal of Photovoltaics  
Project(s)
MehrSi
Funder
Bundesministerium für Bildung und Forschung BMBF (Deutschland)  
Open Access
DOI
10.1109/JPHOTOV.2018.2868021
File(s)
N-525064.pdf (660.02 KB)
Rights
Under Copyright
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • Photovoltaik

  • Silicium-Photovoltaik

  • III-V und Konzentrator-Photovoltaik

  • Neuartige Photovoltaik-Technologien

  • Dotierung und Diffusion

  • III-V Epitaxie und Solarzellen

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