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  4. Deposition of micro crystalline silicon films using microwave plasma enhanced chemical vapor deposition
 
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2018
Zeitschriftenaufsatz
Titel

Deposition of micro crystalline silicon films using microwave plasma enhanced chemical vapor deposition

Abstract
A microwave plasma enhanced chemical vapor deposition (microwave PECVD) process has been investigated to deposit micro crystalline silicon films with a high growth rate from silane (SiH4). A three-layer Bruggeman-Effective-Medium-Approximation (BEMA) model was developed to describe the complex structure of the grown films. The model was confirmed by Raman and spectroscopic ellipsometry measurements. In addition the surface evolution was characterized by AFM (Atomic Force Microscopy) and spectroscopic ellipsometry data. Particular emphasis is given to the correlation between the structural film properties and the deposition parameters. Besides chemical reactions, it is shown that ion bombardment plays an important role for the crystallinity of the grown silicon films. In the presence of ion s, hydrogen radicals are able to etch silicon, which significantly improves the crystallinity of the deposited films. If just radicals are present, the deposited films become amorphous.
Author(s)
Altmannshofer, Stephan
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT
Miller, Bastian
Walter Schottky Institut and Physics Department, Technische Universität München
Holleitner, Alexander W.
Walter Schottky Institut and Physics Department, Technische Universität München
Boudaden, Jamila
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT
Eisele, Ignaz
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT
Kutter, Christoph
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT
Zeitschrift
Thin solid films
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DOI
10.1016/j.tsf.2017.10.031
Language
Englisch
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EMFT
Tags
  • plasma enhanced chemi...

  • microwave plasma

  • mc-silicon

  • spectroscopic ellipso...

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