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  4. Influence of substrate material on radiation characteristics of THz photoconductive emitters
 
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2015
Journal Article
Title

Influence of substrate material on radiation characteristics of THz photoconductive emitters

Abstract
We present in this paper spectral and spatial characteristics of terahertz emission from standard dipole antenna structures used as emitters depending on the substrate material. All antenna structures were lithographically fabricated on low-temperature (LT) grown, few-micrometers-thick gallium arsenide (GaAs) layers. To investigate the effect of the substrate material on the radiation pattern of terahertz beams, either semi-insulating gallium arsenide or high-resistivity silicon substrate wafers have been used. As detector a standard 40 mu m long dipole antenna on a semi-insulating GaAs substrate with a low-temperature grown gallium arsenide layer on it has been employed; this configuration allows for broadband detection and is still efficient enough for the characterization purpose. Strong dependence of the radiation pattern on the substrate used for the terahertz source is demonstrated. The measured patterns and differences between the two cases of substrates are well explained by means of classical diffraction.
Author(s)
Klier, J.  
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Torosyan, G.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Schreiner, N.S.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Molter, D.  
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Ellrich, F.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Zouaghi, W.
Peytavit, E.
Lampin, J.F.
Beigang, R.
Jonuscheit, J.  
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Freymann, G. von  
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Journal
International journal of antennas and propagation : IJAP  
Open Access
DOI
10.1155/2015/540175
Link
Link
Language
English
Fraunhofer-Institut für Physikalische Messtechnik IPM  
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