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  4. Passivation-induced cavity defects in laser-doped selective emitter Si solar cells - formation model and recombination analysis
 
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2015
Journal Article
Titel

Passivation-induced cavity defects in laser-doped selective emitter Si solar cells - formation model and recombination analysis

Abstract
Laser-induced selective Si doping and simultaneous ablation of a dielectric passivation layer is a promising technology for the creation of efficient and cost-effective solar cells. In this paper, the electrical quality of emitters produced with a 532-nm continuous-wave laser will be discussed using elaborate analysis of quasi-steady-state photoconductance (QSSPC) measurements. It will be shown that these emitters cause good charge carrier shielding, which leads to emitter saturation current densities as low as 240 fA/cm2 for unpassivated surfaces. If an SiNx layer is present during laser doping, the emitter recombination increases by a factor of three. This detrimental effect is put down to the formation of microcavities within the recrystallized Si. A model of the ablation mechanism and cavity formation for long laser pulses is proposed, with the experimental data in this study serving as a limiting case for long irradiation lengths.
Author(s)
Geisler, C.
Kluska, S.
Hopman, S.
Glatthaar, M.
Zeitschrift
IEEE Journal of Photovoltaics
Project(s)
rEvolution
Funder
Bundesministerium fĂĽr Umwelt, Naturschutz, Bau und Reaktorsicherheit BMUB
DOI
10.1109/jphotov.2015.2407152
File(s)
N-349483.pdf (974.45 KB)
Language
English
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Fraunhofer-Institut fĂĽr Solare Energiesysteme ISE
Tags
  • Solarzellen - Entwick...

  • Silicium-Photovoltaik...

  • Charakterisierung von...

  • Dotierung und Diffusi...

  • Oberflächen - Konditi...

  • Passivierung

  • Lichteinfang

  • Kontaktierung und Str...

  • Herstellung und Analy...

  • Laser

  • QSSPC

  • Emitter

  • SiNx

  • ablation

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