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  4. Analysis and optimization approach for the doped amorphous layers of silicon heterojunction solar cells
 
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2011
  • Zeitschriftenaufsatz

Titel

Analysis and optimization approach for the doped amorphous layers of silicon heterojunction solar cells

Abstract
Comparison of the open-circuit voltage (external voltage V(oc,ext)) determined by Suns-V(oc) measurements with the implied voltage V(oc, impl) determined by transient photoconductance decay lifetime measurements can yield a quick and easy analysis of silicon heterojunction (SHJ) solar cells, especially in regard to finding the optimum doping concentration of the emitter layer [or back surface field (BSF)]. A sufficiently high doping concentration of the emitter and BSF is mandatory to extract the internal Fermi-level splitting and thus the internal voltage, at the solar cell contacts. However increasing the concentration of doping gases during the deposition of doped amorphous silicon layers results in a reduction of the interface passivation quality and Voc, impl. The best trade off is realized when the ratio of V(oc,ext) to V(oc,impl) (external/internal V(oc)-ratio zeta) reaches a saturation value near 1 upon increasing the doping concentration. AFORS-HET (Automat FOR Simulation of HETerostructures) simulations resulted in the conclusion that the characteristics of the external/internal Voc-ratio are mainly determined by the active doping concentration (doping minus defect concentration).
Author(s)
Pysch, D.
Meinhard, C.
Harder, N.-P.
Hermle, M.
Glunz, S.W.
Zeitschrift
Journal of applied physics
DOI
10.1063/1.3650255
File(s)
N-198514.pdf (887.21 KB)
Language
Englisch
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  • Solarzellen - Entwick...

  • Silicium-Photovoltaik...

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  • Passivierung

  • Lichteinfang

  • Herstellung und Analy...

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