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Threading dislocations in n- and p-type 4H-SiC material analyzed by etching and synchrotron x-ray topography
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2011
Journal Article
Title
Threading dislocations in n- and p-type 4H-SiC material analyzed by etching and synchrotron x-ray topography
Author(s)
Kallinger, B.
Polster, S.
Berwian, P.
Friedrich, J.
Müller, G.
Danilewsky, A.N.
Wehrhahn, A.
Weber, A.-D.
Journal
Journal of Crystal Growth
DOI
10.1016/j.jcrysgro.2010.10.145
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Keyword(s)
defects
doping
etching
x-ray topography
silicon carbide
