An application-driven improvement of the drift-diffusion model for carrier transport in decanano-scaled CMOS devices

This paper presents a quantummechanical modification of the conventional driftdiffusion model for simulation of quasi-ballistic carrier transport under high-field conditions. Thereby, the saturation velocity of charge carriers has been adjusted in dependence on the local electrostatic potential, so that adequate simulation results were obtained for different device dimensions, doping concentration, and supply voltage. The energy dissipation of the electrons has been taken into account by using a self-heating of the device in dependence on thermal material resistances. A good agreement to Monte Carlo simulations and experimental results has been reached for the suggested model.