Diffusion and activation of dopants in silicon and advanced silicon-based materials

A quantitative description of the transient diffusion and activation of boron during post-implantation annealing steps is one of the most challenging tasks in the simulation of silicon doping processes. In industrially relevant situations, simulations needs to address diffusion at extrinsic concentrations, the agglomer ation of self-interstitials, and the formation of boron-interstitial clusters. This paper describes the experimental work performed or used to calibrate model parameters as independently as possible. The combined model is then applied to ultra-shallow junction formation by annealing boron implanted into crystalline or preamorphized silicon. In comparison to bulk silicon, much less is known about d iffusion of dopants in SiGe and germanium which are considered as technological options for future technology nodes. Therefore, dedicated experiments were performed to clarify open points in the diffusion behaviour of dopants in these materials.