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  4. Design and fabrication of 60-Gb/s InP-based monolithic photoreceiver OEICs and modules
 
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2002
Journal Article
Titel

Design and fabrication of 60-Gb/s InP-based monolithic photoreceiver OEICs and modules

Abstract
An InP-based photoreceiver comprising a waveguide-integrated photodiode and a traveling-wave amplifier is presented, which allows dc-coupled interfacing to subsequent electronics without a bias-T. Getting rid of the bias-T provides cost savings of the receiver operations and improves the available bandwidth, gain and gain flatness. The redesigned receiver optoelectronic integrated circuit was fully packaged into a pigtailed module with a coaxial 1.85-mm connector. Its optoelectronic conversion capability for nonreturn-to-zero modulated data rates up to 66 Gb/s is shown.
Author(s)
Bach, H.G.
Beling, A.
Mekonnen, G.G.
Schlaak, W.
Zeitschrift
IEEE Journal of Selected Topics in Quantum Electronics
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DOI
10.1109/JSTQE.2002.806713
Language
English
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Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI
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