Deposition of TiCN and ZrCN layers on light metals by PACVD method using radio frequency and pulsed-DC plasma
Abstract
The deposition of TiCN and ZrCN layers on aluminium by radio frequency and pulsed-DC plasma assisted CVD technique using the metallo-organic compounds of the type tetrakis(diethyl)-amidiometal (Me(N(C2H5)2)4) was investigated. The deposition temperature was below 160°C. The chemical composition of the deposited layers depends on the plasma source and on the process parameters, e.g. plasma power. The growth rate is increased by using RF plasma compared to the pulsed-DC plasma. The TiCN layers deposited by pulsed-DC plasma have a hardness of up to 1800 HK0.005 and are harder than the layers produced by RF plasma. The ion bombardement during the layer growth seems decisive for the hardness increase observed.
