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  4. Thin stoichiometric silicon nitride prepared by r.f. reactive sputtering
 
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1999
Journal Article
Title

Thin stoichiometric silicon nitride prepared by r.f. reactive sputtering

Other Title
Herstellung dünner stöchiometrischer Siliciumnitridschichten mittels RF Kathodenzerstäubung
Abstract
Thin silicon nitride films were prepared on silicon wafers at deposition rates of 4nm/min by r.f. reactive sputtering. Various mechanical, chemical and optical properties were investigated as a function of r.f. power, gas composition and temperature by means of AFM, RBS, XPS and an ellipsometer. Chemical stoichiometric films, with N-to-Si atomic ratio of 4:3 and refractive index of 2.0 were achieved even at room temperature. An interference filter for a UV detector with central wavelength of 254nm was manufactured based on sputtered nitride, aluminum and silicon dioxide.
Author(s)
Qian, F.
Temmel, G.
Schnupp, R.
Ryssel, H.
Journal
Microelectronics reliability  
Conference
Workshop "Dielectrics in Microelectronics" 1998  
DOI
10.1016/S0026-2714(98)00229-7
Language
English
IIS-B  
Keyword(s)
  • interference filter

  • oxygen resonance

  • RBS

  • r.f. reactive sputtering

  • silicon nitride

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