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  4. Bipolar model extension for MOS transistors considering gate coupling effects in the HBM ESD domain
 
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1999
Journal Article
Title

Bipolar model extension for MOS transistors considering gate coupling effects in the HBM ESD domain

Author(s)
Wolf, H.
Gieser, H.
Stadler, W.
Journal
Microelectronics reliability  
DOI
10.1016/S0026-2714(99)00074-8
Language
English
Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM  
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