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  4. Influence of RTP on Vacancy Concentrations
 
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1998
Book Article
Title

Influence of RTP on Vacancy Concentrations

Other Title
Einfluss von Schnellheizprozessen auf die Konzentration von Gitterleerstellen
Abstract
The increase and reduction of the vacancy concentration by rapid thermal processing (RTP) was investigated by platinum diffusion. Direct experimental evidence is presented for the consumption of vacancies during oxidation and for the introduction of vacancies during processing in ammonia and nitrogen. These results confirm the indirect conclusions from dopant diffusion and from the growth and shrinkage of extended defects. In addition, it was possible to establish an upper limit for the equilibrium concentration of vacancies at 1180 deg C which is lower than previously reported values.
Author(s)
Jacob, M.
Pichler, P.  orcid-logo
Wohs, M.
Ryssel, H.
Falster, R.
Mainwork
Semiconductor process and device performance modelling  
Language
English
IIS-B  
Keyword(s)
  • Gitterleerstellen

  • nitridation

  • oxidation

  • Platin

  • RTP

  • silicium

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