20 Gbit/s long wavelength monolithic integrated photoreceiver grown on GaAs

The first 20Gbit/s 1.3-1.55mu m wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using AlGaAs/GaAs HEMTs. At a wavelength of 1.3mu m, the integrated InGaAs MSM photodiode has a responsivity of 0.32A/W and the photoreceiver has a -3 dB bandwidth of 16.5GHz. Clearly-opened eye diagrams for a 20Gbit/s 1.55mu m optical data stream have been demonstrated.