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1996
Journal Article
Titel
Dickschicht-Feuchtesensor auf der Basis halbleitenden MnWO4-Metalloxids. Teil 1. Aufbau und Charakterisierung des Feuchtesensors
Alternative
Thick-film humidity sensor based on MnWO4 semiconductive metal oxide. Part 1. Preparation and characterization of the humidity sensor
Abstract
This paper describes the results of studies on fabrication and characterization of a novel thick-film ceramic humidity sensor with conductive properties. Semiconductive MnWO4 with a particle size of 3.0 mu m was used as the sensitive raw material which was screened into a 40 mu m polyceramic layer. Cations instead of a glass binder were added by mixing the humidity sensor paste. This new fabricating procedure ensures a rich porosity of the fired sensing layer and a good adhesion of the sensitive saver to the Al2O3 substrate. The sandwich configuration of the sensor element allows the sensitive layer to be used optimally. The developed thick-film humidity sensor shows a high sensitivity, fast responce and small hysteresis. The effect of the temperature on the sensor characteristics can be compensated by using of a thick- film NTC-resistor.