A novel pseudomorphic (GaAs1-xSbx-InyGa1-yAs)/GaAs bilayer-quantum-well structure lattice-matched to GaAs for long-wavelength optoelectronics

Two types of quantum well (QW) structures grown lattice matched on (100) GaAs have been studied. The first type of structure consists of pseudomorphic GaAsxSb1-x/GaAs (x equal or smaller than 0.3) SQWs which show emission wavelengths longer than those reported for pseudomorphic InyGa1-yAs/GaAs QWs. However, the attractive emission wavelenght of 1.3 nanometre has not been achieved. To reach this goal, a novel type of bilayer QW (BQW) has been grown consisting of a stack of two adjacent pseudomorphic layers of GaAsxSb1-x and InyGa1-yAs embedded between GaAs confinement layers