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  4. Dynamic SPICE-Simulation of the electrothermal behavior of SOI-MOSFETs
 
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1995
Journal Article
Title

Dynamic SPICE-Simulation of the electrothermal behavior of SOI-MOSFETs

Abstract
A complete electrothermal model of the SOI MOSFET is implemented and can be used in SPICE3. This model is formulated as a set of algebraic and (partial) differential equations which is converted automatically with a model translator into a SPICE3 netlist. Nevertheless, neither the simulator is rewritten nor SPICE device models are implemented or changed. The model is applied to several static and dynamic simulations of SOI MOSFETs to show the electrothermal interaction.
Author(s)
Bielefeld, J.
Pelz, G.
Abel, H.B.
Zimmer, G.
Journal
IEEE transactions on electron devices  
DOI
10.1109/16.469405
Language
English
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Keyword(s)
  • electric heat

  • interaction

  • MOS-Transistor

  • Simulationsmodell

  • Stromwärme

  • Transistormodell

  • Wechselwirkung

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