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  4. Interface characterization of InAs/AlSb heterostructures by far infrared optical spectroscopy
 
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1994
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Titel

Interface characterization of InAs/AlSb heterostructures by far infrared optical spectroscopy

Alternative
Grenzflächencharakterisierung von InAs/AlSb Heterostrukturen mit optischer Fern-Infrarot-Reflektions-Spektroskopie
Abstract
We present high resolution measurements of the far infrared reflectance and absorbance of InAs/AlSb type II heterostructures, grown on GaAs substrates by molecular beam epitaxy. Quantum wells grown with AlAs-like interfaces show broadening and blue shifting of the InAs transverse optical (TO) phonon compared to samples with InSb-like interfaces. This is explained by incorporation of arsenic in the AlSb barriers. The InSb-interface mode, recently reported from Raman investigations, could be observed in the multiple quantum well. Two lines are observed, which are attributed to the normal (AlSb on InAs) and the inverted (InAs on AlSb) interfaces.
Author(s)
Fuchs, F.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Schmitz, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Schwarz, K.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Wagner, J.
Ralston, J.D.
Koidl, P.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Zeitschrift
Applied Physics Letters
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DOI
10.1063/1.112793
Language
Englisch
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Tags
  • far infrared optical ...

  • Fern-Infrarot-Reflekt...

  • Grenzfläche

  • InAs/AlSb heterostruc...

  • InAs/AlSb Heterostruk...

  • interface

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