An explanation of transient-enhanced diffusion and electrical activation of boron in crystalline silicon during postimplantation annealing

The time evolution of the transiently enhanced diffusion and of the electrical activation of boron in crystalline silicon during postimplantation thermal annealing is modelled by solving a system of coupled diffusion-reaction equations for the dopant and the silicon point defects. Outdiffusion of an implantation-induced silicon self-interstitial oversaturation and the kick-out reaction Bint <---> Bsub + I are assumed to be the leading mechanisms for boron activation. The concept of point defect impurity pair diffusion is used to model the diffusion process. Results are shown for low-temperature furnace annealing after implantation of low or medium boron doses.