Dopant migration caused by point defect gradients

The migration of dopants due to gradients of intrinsic point defects is described controversially in the literature. For migration of dopants in a vacancy gradient, competing theories predict fluxes in opposite directions. Both theories can be explained by interaction potentials ending at the second coordination site or including the third coordination site. In this work, implantation of boron at temperatures around 900 degree C is used to clarify the effects of defect gradients on dopant transport.