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1992
Journal Article
Titel
Integrated wavelength demultiplexer-receiver on InP
Abstract
A detector stage comprising a photodiode, a field-effect transistor, and a load resistor, and a wavelength demultiplexer have been monolithically integrated in the GaInAsP/InP material system. Chips were mounted into complete modules and operated in a 1.3 mu m/1.55 mu m bidirectional transmission link. At 576 Mbit/s and 10-9 bit error rate the sensitivity of the module was -21 dBm, while the intrinsic sensitivity of the receiver was determined to be -21 dBm.
Tags
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field effect integrated circuits
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gallium arsenide
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iii-v semiconductors
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indium compounds
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infrared detectors
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integrated optoelectronics
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multiplexing equipment
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optical communication equipment
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photodiodes
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receivers
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integrated wavelength demultiplexer receiver
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monolithic integration
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iii-v semiconductor
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detector stage
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photodiode
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field-effect transistor
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load resistor
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bidirectional transmission link
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bit error rate
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sensitivity
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intrinsic sensitivity
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1.3 micron
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1.55 micron
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576 mbit/s
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inp
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GaInAsP-InP