Ion projection lithography - electronic alignment and dry development of IPL exposed resist materials

Experiments performed with a research type Ion Projector show electronic alignment in X, Y, and rotation with 0.1 Mym accuracy for 2 mm*2 mm chip fields obtained at 9* ionoptical reduction. The fine adjustment of the projected ion image is accomplished without moving mechanical parts. New methods of dry development of ion beam exposed resist materials use the selectivity of excimer laser photoablation and selective plasma resist etching. These technique are suited for in-situ processing in future production environments.