Electrical characterization of buried layers in silicon.

Buried layers of two types are discussed, namely as produced by "external" and "internal" means (ion implantation and formation of a denuded zone, respectively). Results of the following characterization techniques are presented: spreading and sheet resistance, admittance, crosstalk, rectification. Among the admittance measurements, special emphasis is given to the lifetime profile evaluation. It is shown that the performance and the characteristics of a device can be exploited for buried layer characterization. (IAF)