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  4. Heterogeneous Interposer Based Integration of Chips with Copper Pillars and C4 Balls to Achieve High Speed Interfaces for ADC Application
 
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2017
Conference Paper
Title

Heterogeneous Interposer Based Integration of Chips with Copper Pillars and C4 Balls to Achieve High Speed Interfaces for ADC Application

Abstract
Silicon Interposers enable very high routing density in between integrated circuits (ICs) that are fabricated in different technologies like 65 nm for power amplifiers and 14 nm FinFET for highest performance. This is not possible within a System on Chip (SoC). While heterogeneous silicon interposer integration is now used in the first products for processor-memory-integration, it is still rarely used in other fields of application. This paper proposes an approach to integrate an ADC (e.g. fabricated in SiGe bipolar technology) with an existing processing unit like a digital signal processor (DSP) or a field programmable gate array (FPGA) using an interposer and an additional IC for communication. This approach allows to further increase the data rate from the ADC to the processor. It also simplifies the large and costly interface of the ADC. The paper discusses different options of the approach and their impact to the interposer routing. The requirements for the routing of the interposer interconnections are derived from the application, models of the interconnections are extracted with 3D FEM Tools. Finally the interconnections are simulated using accurate Spice models for the IO cells.
Author(s)
Dittrich, Michael
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Heinig, Andy  
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Hopsch, Fabian  
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Trieb, Robert  
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Mainwork
ECTC 2017, the 67th Electronic Components and Technology Conference  
Project(s)
SiPoB-3D
Funder
Bundesministerium für Bildung und Forschung BMBF (Deutschland)  
Conference
Electronic Components and Technology Conference (ECTC) 2017  
DOI
10.1109/ECTC.2017.221
Language
English
Fraunhofer-Institut für Integrierte Schaltungen IIS  
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