Monolithic GaN-on-Si half-bridge circuit with integrated freewheeling diodes

This work presents the design, realization, and the characterization of a monolithic GaN-on-Si half-bridge circuit with integrated Schottky contacts as freewheeling diodes. The extrinsic- and intrinsic- layouts are realized, analyzed, and compared to other approaches. The high- and low-side switches feature an off-state voltage of 600 V, an on-state resistance of 120 mΩ, and a reverse resistance of below 150 mΩ at corresponding drain currents of 30 A. Furthermore, the switches achieve very low gate-charges of below 5 nC and reverse recovery charges of 12 nC. The on-state- and reverse-state-performances are benchmarked against other state-of-the-art power devices and compared to the theoretical limits.