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  4. Monolithic, high transimpedance gain (3.3 k ohm), 40 Gbit/s InP-HBT photoreceiver with differential outputs
 
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1999
Journal Article
Title

Monolithic, high transimpedance gain (3.3 k ohm), 40 Gbit/s InP-HBT photoreceiver with differential outputs

Other Title
Monolithischer 40 Gbit/s InP-HBT Photoempfänger mit hoher Transimpedanz (3,3 k Ohm) und differentiellen Ausgängen
Abstract
A monolithically integrated, lumped 4OGbit/s photoreceiver consisting of an InGaAs pin-photodetector, an InP/InGaAs SHBT transimpedance and a differential post-amplifier is presented. The complete circuit has an optical/electrical bandwidth of 28GHz. The open 40 Gbit/s eye diagrams demonstrate the successful highspeed operation of the photoreceiver. The transimpedance gain of the circuit was measured to be 3.3 k ohm (differential) which is the highest transimpedance yet reported for any.monolithically integrated 40 Gbit/s photoreceiver.
Author(s)
Huber, A.
Huber, D.
Morf, T.
Jäckel, H.
Bergamaschi, C.
Hurm, V.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ludwig, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schlechtweg, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Electronics Letters  
DOI
10.1049/el:19990597
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • 40 Gbit/s

  • OEIC

  • Photoempfänger

  • photoreceiver

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