2018
Journal Article
Title

P-110: Efficient InP-based quantum dot light emitting diodes utilizing a crosslinkable hole transport layer

Abstract
We demonstrate efficient InP-based quantum dot (QD) LEDs utilizing a crosslinkable hole transport layers (HTL). The developed HTL exhibit great solvent resistance and smooth surface roughness. The influence of QD design, HTL structure as well as the corresponding processing of these materials on device performance was investigated.
Author(s)
Kim, Y.
Heyne, B.
Geßner, A.
Park, Y.
Kang, M.
Ahn, S.
Lee, B.
Wedel, A.
Journal
DOI
Language
English