MOCVD of TaN Using the All-Nitrogen-Coordinated Precursors [Ta(NEtMe)3(N-tBu)], [Ta(NEtMe)(N-tBu){C(N-iPr)2(NEtMe)}2] and [Ta(NMeEt)2(N-tBu){Me2N-N(SiMe3)}]

Three different all nitrogen-coordinated heteroleptic precursors, [Ta(NEtMe)3(N-tBu)] (1), [Ta(NEtMe)(N-tBu){C(N-iPr)2-(NEtMe)}2] (2), and [Ta(NMeEt)2(N-tBu)(tdmh)] (3) (Et = ethyl, Me = methyl, tBu = tert-butyl, iPr = isopropyl, tdmh = N-trimethylsilyl-N,N-dimethylhydrazine) are tested in thermally activated metal-organic (MO)CVD of TaN thin films. Using 1 and 2, conducting cubic-TaN films can be deposited (1: 4000 mu omega cm; 2: 10000-20000 mu omega cm), while 3 results in the formation of insulating silicon-containing films with high levels of oxygen impurities. Raising the chemical complexity of precursors 2 and 3 with respect to 1 does not necessarily lead to high carbon incorporation, even in the absence of additional ammonia. Metal-insulator-semiconductor structures with TaN as the metal gate material are fabricated and characterized by capacitance-voltage (C-V) and current density-voltage (J-V) measurements. Precursor 3 is used to deposit insulating TaSiN(O) films in a large-scale reactor on 150 mm prestructured metal oxide semiconductor (MOS) wafers.