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  4. Anodic bonding at low voltage using microstructured borosilicate glass thin-films
 
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2010
Conference Paper
Title

Anodic bonding at low voltage using microstructured borosilicate glass thin-films

Abstract
The use of borosilicate glass for anodic wafer bonding to silicon is well established in industry. In this paper we present a matured approach, where a microstructured borosilicate glass thin-film instead of a bulk glass wafer is used as anodic bond layer. A glass layer with a thickness of 3-5 m is sufficient for a stable bond at very moderate bond parameters with bond voltages in the range of 30-60 V at standard bond temperatures of around 300°C and below. This enables the use of anodic bonding also for sensitive devices.
Author(s)
Leib, J.
Hansen, U.
Maus, S.
Feindt, H.
Hauck, K.
Zoschke, K.
Toepper, M.
Mainwork
3rd Electronics System Integration Technology Conference, ESTC 2010. Proceedings. Vol.2  
Conference
Electronics System Integration Technology Conference (ESTC) 2010  
DOI
10.1109/ESTC.2010.5642923
Language
English
Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM  
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