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  4. Anodic bonding at low voltage using microstructured borosilicate glass thin-films
 
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2010
Konferenzbeitrag
Titel

Anodic bonding at low voltage using microstructured borosilicate glass thin-films

Abstract
The use of borosilicate glass for anodic wafer bonding to silicon is well established in industry. In this paper we present a matured approach, where a microstructured borosilicate glass thin-film instead of a bulk glass wafer is used as anodic bond layer. A glass layer with a thickness of 3-5 m is sufficient for a stable bond at very moderate bond parameters with bond voltages in the range of 30-60 V at standard bond temperatures of around 300°C and below. This enables the use of anodic bonding also for sensitive devices.
Author(s)
Leib, J.
Hansen, U.
Maus, S.
Feindt, H.
Hauck, K.
Zoschke, K.
Toepper, M.
Hauptwerk
3rd Electronics System Integration Technology Conference, ESTC 2010. Proceedings. Vol.2
Konferenz
Electronics System Integration Technology Conference (ESTC) 2010
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DOI
10.1109/ESTC.2010.5642923
Language
Englisch
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