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  4. G-factor and effective mass anisotropies in pseudomorphic strained layers.
 
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1991
Journal Article
Title

G-factor and effective mass anisotropies in pseudomorphic strained layers.

Other Title
Anisotropie der g-Faktoren und effektiven Massen in pseudomorphen verspannten Schichten
Abstract
We present an evaluation for the calculation of the effective g-factor and the effective mass of conduction band electrons in pseudomorphic strained layers. We apply this evaluation to some important heterostructure systems and show that the effective mass is mainly isotropically shifted wheras the g-factor exhibits anisotropic splitting. We show that these effects, being attributed to the internal strains induced by lattice mismatch, may be used to characterize heterostructures.
Author(s)
Hendorfer, G.
Schneider, J.
Journal
Semiconductor Science and Technology  
DOI
10.1088/0268-1242/6/7/005
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • effective mass

  • effektive Masse

  • elastic strain

  • elastische Verspannung

  • g-factor

  • Gitterfehlanpassung

  • III-V Halbleiter

  • III-V semiconductors

  • lattice mismatch

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