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  4. Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
 
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2017
Conference Paper
Title

Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding

Abstract
We present a new bonding process for galliumnitride (AlGaN/GaN) devices from Si onto diamond substrates. In our technology AlGaN/GaN-devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and SCD at 3 GHz and 50 V drain bias show comparable power-added-efficiency (PAE) and output power (Pout) levels. Also, comparisons of 2x1 mm GaN-diodes on Si, PCD, and SCD reveal significantly increased power levels. In summary, we show a promising new GaN-on-diamond technology for future high power, microwave GaN-device applications.
Author(s)
Gerrer, Thomas
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Cimalla, Volker  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Waltereit, Patrick  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Müller, Stefan
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Benkhelifa, Fouad  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Maier, Thomas  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Czap, Heiko  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Nebel, Christoph E.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
12th European Microwave Integrated Circuits Conference, EuMIC 2017  
Conference
European Microwave Integrated Circuits Conference (EuMIC) 2017  
European Microwave Week (EuMW) 2017  
European Microwave Conference (EuMC) 2017  
DOI
10.23919/EuMIC.2017.8230651
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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