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  4. Experimental evidence of wide bandgap in triclinic (001)-oriented Sn5O2(PO4)2 thin films on Y2O3 buffered glass substrates
 
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2020
Journal Article
Title

Experimental evidence of wide bandgap in triclinic (001)-oriented Sn5O2(PO4)2 thin films on Y2O3 buffered glass substrates

Abstract
Sn5O2(PO4)2 is a promising p-type transparent semiconducting oxide. Phase-pure triclinic Sn5O2(PO4)2 thin films were grown by pulsed laser deposition using a Sn2(P2O7) target with higher phosphorus content. The (001)-oriented growth of triclinic Sn5O2(PO4)2 on glass was achieved by means of a (111)-textured Y2O3 buffer layer. STEM-EDX and XPS revealed that the composition of the obtained film is near-stoichiometric, thus indicating a suitable semiconducting material. The bandgap of the triclinic Sn5O2(PO4)2 film was estimated to be as large as 3.87 eV, which is the first experimental evidence verifying a recent theoretical prediction by Q. Xu et al., Chem. Mater., 2017, 29, 2459 quite closely.
Author(s)
Fukumoto, M.
Yang, C.
Yu, W.
Patzig, C.
Höche, T.
Ruf, T.
Denecke, R.
Lorenz, M.
Grundmann, M.
Journal
Journal of materials chemistry. C, Materials for optical and electronic devices  
DOI
10.1039/d0tc03213a
Language
English
Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IMWS  
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