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  4. Wire-Like ordering of Si dopant atoms on GaAs-001- vincinal surgaces studied by raman scattering
 
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1995
Conference Paper
Title

Wire-Like ordering of Si dopant atoms on GaAs-001- vincinal surgaces studied by raman scattering

Other Title
Drahtartige Anordnung von Si-Dotieratomen auf verkippten GaAs -100-Oberflächen untersucht mittels Ramanstreuung
Abstract
Raman scattering in resonance with Edeep0 + Deltadeep0 band gap of GaAs has been used to study the ordered incorporation of Si dopant atoms on GaAs(001) vicinal surfaces. A Raman excitation at 120 cmhighminus1 was observed for a series of Delta-doped samples. The observed shape of the spectra can be explained by excitations of photo-created near-surface holes with a peak at 120cmhighminus1 overlapping with nonequilibrium huminescence at the Edeepo +Deltadeep0 band edge. A pronounced polarization asymmetry in the scattering intensity of this excitation was observed in a sample grown under conditions favorable for wire-like Si incorporation. The sensitivity of this polarization asymmetry to the wire-like dopant incorporation seems to be even stronger than that previously observed for intersubband plasmon-phonon modes excited in resonance with E1 band gap of GaAs.
Author(s)
Ramsteiner, M.
Däweritz, L.
Hey, R.
Jungk, G.
Wagner, J.
Mainwork
22nd International Conference on the Physics of Semiconductors 1995. Vol. 2  
Conference
International Conference on the Physics of Semiconductors 1995  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • GaAs

  • Quantendraht

  • quantum wire

  • raman spectroscopy

  • Ramanspektroskopie

  • Si delta-doping

  • Si delta-Dotierung

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