Ion implantation in single-crystal magnetic ferrite.

Single crystalline magnetic ferrite was implanted with nitrogen ions at 180 keV to investigate recrystallization behavior by post annealing at temperatures from 700 to 900 degree C. The recrystallization behavior was further compared with that after mechanical surface polishing followed by annealing. An annealing stage at 800 degree C was found to exist for each of the lattice damages induced by ion implantation or by mechanical surface polishing. An activation energy of 2.0 eV was obtained for recrystallization.