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  4. Dependence of resonant electron and hole tunnelling times between quantum wells on barrier thickness.
 
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1994
Journal Article
Title

Dependence of resonant electron and hole tunnelling times between quantum wells on barrier thickness.

Other Title
Abhängigkeit der resonanten Elektron- und Lochtunnelzeiten zwischen Quantum Wells von der Barrierendicke
Abstract
We investigated resonant tunnelling of electrons and holes between coupled quantum wells using time-resolved luminescence spectroscopy. Exponential dependence of tunnelling times on barrier width is observed for electrons but not for holes. The tunnelling times of electrons are correctly described by a model which takes into account inhomogeneous broadening.
Author(s)
Heberle, A.P.
Zhou, X.Q.
Tackeuchi, A.
Rühle, W.W.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Semiconductor Science and Technology  
DOI
10.1088/0268-1242/9/5S/032
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • III-V Halbleiter

  • III-V semiconductors

  • Quantentopf

  • quantum wells

  • time resolved measurement

  • zeitaufgelöste Messung

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