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  4. Opto-electronic properties of different black silicon structures passivated by thermal ALD deposited Al2O3
 
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2013
Conference Paper
Titel

Opto-electronic properties of different black silicon structures passivated by thermal ALD deposited Al2O3

Abstract
Black silicon (b-Si) structures offer improved light absorption but require appropiate surface passivation for photovoltaic applications. Here, we compare the opto-electronic performance of different wet and dry etched b-Si structures passivated by thermal ALD deposited Al2O3.
Author(s)
Otto, M.
Kroll, M.
Käsebier, T.
Li, X.
Gesemann, B.
Füchsel, K.
Ziegler, J.
Sprafke, A.
Wehrspohn, R.B.
Hauptwerk
Optical Nanostructures and Advanced Materials for Photovoltaics
Konferenz
Conference "Optical Nanostructures and Advanced Materials for Photovoltaics" 2013
Renewable Energy and the Environment Congress 2013
Thumbnail Image
DOI
10.1364/PV.2013.PM1C.3
Language
English
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