2013
Conference Paper
Title

Opto-electronic properties of different black silicon structures passivated by thermal ALD deposited Al2O3

Abstract
Black silicon (b-Si) structures offer improved light absorption but require appropiate surface passivation for photovoltaic applications. Here, we compare the opto-electronic performance of different wet and dry etched b-Si structures passivated by thermal ALD deposited Al2O3.
Author(s)
Otto, M.
Kroll, M.
Käsebier, T.
Li, X.
Gesemann, B.
Füchsel, K.
Ziegler, J.
Sprafke, A.
Wehrspohn, R.B.
Mainwork
Conference
DOI
Language
English