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  4. Wavelength-selective 4H-SiC UV-sensor array
 
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2019
Journal Article
Titel

Wavelength-selective 4H-SiC UV-sensor array

Abstract
In this work, monolithically integrated wavelength-selective 4H-SiC UV-sensor arrays were manufactured using two photolithography masks and only one implantation sequence demonstrating the potential of the advanced 4H-SiC process technology for the first time. The process technology is described in detail for the fabrication of a 2 × 2 wavelength-sensitive UV-sensor array including two variants with different thicknesses of the p-emitter. The maximum spectral responsivity is 92 mA/W for a wavelength of 300 nm and the devices with a thick p-emitter and 162 mA/W for a wavelength of 290 nm and devices with the thin p-emitter. The corresponding values of the external quantum efficiency are 38%, and 69%, respectively. Furthermore, another UV-sensor characteristic is found evaluating the current difference between both types with a maximum spectral responsivity of 80.2 mA/W at a wavelength of 270 nm.
Author(s)
Matthus, C.D.
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Bauer, A.J.
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Frey, L.
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Erlbacher, T.
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Zeitschrift
Materials Science in Semiconductor Processing
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DOI
10.1016/j.mssp.2018.10.019
Language
English
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Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Tags
  • ion implantation

  • photodiode

  • semiconductor diodes

  • ultraviolet device

  • external quantum effi...

  • monolithically integr...

  • photolithography mask...

  • process technology

  • SiC PiN diode

  • spectral responsivity...

  • UV sensor

  • wavelength-selective

  • silicon carbide

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