Defect characterization of unannealed neutron transmutation doped silicon by means of deep temperature microwave detected photo induced current transient spectroscopy

Unannealed neutron transmutation doped silicon substrates with a target resistivity of approximately 1000Ocm are characterized for radiation induced defects by means of microwave detected photoinduced current transient spectroscopy (MD-PICTS). This technique is a contactless advancement of conventional PICTS and does not require the fabrication of ohmic contacts. Defect spectroscopy by means of MD-PICTS is conducted in a broad temperature range between 30 K and 293 K, which makes it possible to identify energetically shallow as well as deep traps. In addition, a wavelength dependent analysis is performed to determine whether a defect is located at the surface or in the bulk material. Three traps with an average activation energy of 68meV, 85meV, and 150meV are observed. In addition, an indication for deep defect states with activation energies between 320meV and 480meV is found. According to the wavelength dependent analysis, it is assumed that all observed traps are bulk defects. Finally, a minority carrier lifetime of approximately 0.7 ms is determined, suggesting that the crystal is heavily damaged by neutron radiation.