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  4. Quantitative modeling of hydrogen diffusion and reactivation of H-passivated Al-acceptors in SiC
 
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2001
Conference Paper
Titel

Quantitative modeling of hydrogen diffusion and reactivation of H-passivated Al-acceptors in SiC

Author(s)
Hulsen, C.
Achtziger, N.
Herold, J.
Witthuhn, W.
Hauptwerk
Silicon carbide and related materials
Konferenz
European Conference on Silicon Carbide and Related Materials (ECSCRM) 2000
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English
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