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  4. Quantitative modeling of hydrogen diffusion and reactivation of H-passivated Al-acceptors in SiC
 
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2001
Conference Paper
Title

Quantitative modeling of hydrogen diffusion and reactivation of H-passivated Al-acceptors in SiC

Author(s)
Hulsen, C.
Achtziger, N.
Herold, J.
Witthuhn, W.
Mainwork
Silicon carbide and related materials  
Conference
European Conference on Silicon Carbide and Related Materials (ECSCRM) 2000  
Language
English
IIS-A  
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