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Quantitative modeling of hydrogen diffusion and reactivation of H-passivated Al-acceptors in SiC
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2001
Conference Paper
Titel
Quantitative modeling of hydrogen diffusion and reactivation of H-passivated Al-acceptors in SiC
Author(s)
Hulsen, C.
Achtziger, N.
Herold, J.
Witthuhn, W.
Hauptwerk
Silicon carbide and related materials
Konferenz
European Conference on Silicon Carbide and Related Materials (ECSCRM) 2000
Language
English
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