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Quantitative modeling of hydrogen diffusion and reactivation of H-passivated Al-acceptors in SiC
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2001
Conference Paper
Title
Quantitative modeling of hydrogen diffusion and reactivation of H-passivated Al-acceptors in SiC
Author(s)
Hulsen, C.
Achtziger, N.
Herold, J.
Witthuhn, W.
Mainwork
Silicon carbide and related materials
Conference
European Conference on Silicon Carbide and Related Materials (ECSCRM) 2000
Language
English
IIS-A