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2006
Conference Paper
Title

Embedded self repair by transistor and gate level reconfiguration

Abstract
Technology forecasts predict that nanometer IC technologies will not yield large chip areas without non-functional transistors. Mechanism of redundancy and re-organization for self-repair at the transistor and gate level are required, which can effectively handle realistic fault effects in CMOS logic circuits.
Author(s)
Kothe, R.
Vierhaus, H.T.
Coym, T.
Vermeiren, W.
Straube, B.
Mainwork
IEEE Design and Diagnostics of Electronic Circuits and systems 2006  
Conference
IEEE Design and Diagnostics of Electronic Circuits and systems 2006  
DOI
10.1109/DDECS.2006.1649613
Language
English
Fraunhofer-Institut für Integrierte Schaltungen IIS  
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