2009
Conference Paper
Title

Investigations on the plasma-surface interaction during DBD-treatment for low-temperature direct silicon wafer bonding

Abstract
O2 is an innovative activation method for low-temperature direct Si wafer bonding. Plasma-treated SiO2 layers are analyzed by spectroscopic methods (FTIR, XPS, ellipsometry), XRR, AFM and contact angle measurements. Reasons for improved low-temperature bond strengthening after DBD activation are discussed.
Author(s)
Michel, B.
Eichler, M.
Klages, C.-P.
Mainwork
Conference
Link
Language
English