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  4. Fully electrical test procedure for inertial MEMS characterization at wafer-level
 
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2013
Conference Paper
Title

Fully electrical test procedure for inertial MEMS characterization at wafer-level

Abstract
The fast growth of MEMS technologies for the production of inertial sensors in the last decade makes the characterization at wafer-level very important. In this paper is presented a test setup for measuring electrical and mechanical parameters of capacitive MEMS inertial sensors. The test setup is used in the production for automotive and consumer applications. It is fully electrical (i.e. none of the stimuli to the sensors is mechanical). The core of the test setup is a test algorithm. The design of the test algorithm was aimed at a fast, reliable and repeatable wafer-sort test. With the test setup described in this paper, it is possible to measure electrical and mechanical parameters of inertial sensors with up-to-6 dimensions.
Author(s)
Sisto, A.
Schwarzelbach, O.
Fanucci, L.
Mainwork
PRIME 2013, 9th Conference on Ph.D. Research in Microelectronics and Electronics  
Conference
Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) 2013  
DOI
10.1109/PRIME.2013.6603130
Language
English
Fraunhofer-Institut für Siliziumtechnologie ISIT  
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