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  4. Resolution improvement of ion projector with a low energy spread multicusp ion source
 
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1999
Conference Paper
Title

Resolution improvement of ion projector with a low energy spread multicusp ion source

Abstract
A new multicusp ion source developed by the Lawrence Berkeley Laboratory has been implemented into the ion projector of the Fraunhofer institute ISiT in Berlin. This source with low energy spread of 2eV reduces chromatic aberration so that 50 nm lines can be printed with an exposure dose of 0.3 mu C/cm2 of 75 keV He+ ions into standard 300 nm thick DUV resist (Shipley UV II HS).
Author(s)
Brünger, W.H.
Torkler, M.
Leung, K.N.
Lee, Y.
Williams, M.D.
Löschner, H.
Stengl, G.
Fallmann, W.
Paschke, F.
Stangl, G.
Rangelow, J.W.
Hudek, P.
Mainwork
Micro- and nanoengineering 98 - MNE  
Conference
International Conference on Micro- and Nanofabrication (MNE) 1998  
DOI
10.1016/S0167-9317(99)00044-1
Language
English
Fraunhofer-Institut für Siliziumtechnologie ISIT  
Keyword(s)
  • aberration

  • ion beam lithography

  • ion source

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