Operation of PCB-embedded, high-voltage multilevel-converter GaN-IC

This work presents the operation of a PCB embedded diode-clamped multilevel-converter integrated circuit (IC) fabricated in a lateral, high-voltage AlGaN/GaN-on-Si hetero junction technology. It is demonstrated, that PCB-embedding is an appropriate assembly technique for lateral powerICs with high-integration levels. By placing DC-link capacitors onto the IC-package, parasitc inductances in the power loop can be reduced to the sub-nH range. Considerations regarding common substrate biasing issues in lateral GaN-ICs enable the inverter operation of the 2x3 mm2-ICat input voltages up to 300 V and output power levels of 45W at a switching frequency of 100 kHz.