Transport properties of microstructured MF-sputtered Zn 0.98Al0.02O

We studied the effect of microstructuring on the electric transport properties of Zn0.98Al0.02O thin films (AZO) grown by reactive mid-frequency magnetron sputtering. A series of AZO wire arrays was prepared by photolithography followed by wet-chemical etching. The nominal wire width b was varied between 8 and 32 m. The wire arrays were characterized by scanning electron microscopy, atomic force microscopy, and temperature-dependent resistivity measurements. The extension z of the surface-layer affected by the microfabrication process and its effect on the electronic transport through the wire were assessed. z is determined by the grain structure of the sputtered layer and is independent of wire thickness and degree of under-etching.