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  4. Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP, and GaP
 
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1986
Journal Article
Title

Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP, and GaP

Author(s)
Haydl, W.H.
Pomrenke, G.S.
Ennen, H.
Journal
Journal of applied physics  
DOI
10.1063/1.336619
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Defektkomplex

  • Erde(selten implantiert)

  • III-V Halbleiter

  • Infra 4f-Uebergang

  • Infrarotemission

  • Photolumineszenz-Untersuchung

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