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  4. Modular modeling of RF behavior of interconnect structures in 3D integration
 
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2009
Conference Paper
Title

Modular modeling of RF behavior of interconnect structures in 3D integration

Abstract
Currently, 3D integration is still characterized by stacking of similar dies (e.g. memories or cpus) which are mostly connected to each other at their outer boundaries using bond wires. Nevertheless, first steps are done towards the combination of different functional units (sensor, micro controller, radio ...) which are usually not designed for 3D integration. The dies are adapted to current packaging technologies, like e.g. TQFP, concerning mounting, location and size of pads... [1]. Interposers containing rewiring and interchip vias (ICVs) are often used to be able to connect these units together [2]. The future potential will lay in real 3D systems. There we will encounter short signal paths enabling among others performing very efficient signal processing for sensor array structures, parallel computing ... But, due to dense integration of the 3D system a lot of physical interactions within the 3D systems exist.
Author(s)
Stolle, J.
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Reitz, S.
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Schneider, P.
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Wilde, A.
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Mainwork
Design, Automation and Test in Europe, DATE 2009. Proceedings. CD-ROM  
Conference
Design, Automation and Test in Europe Conference (DATE) 2009  
Language
English
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Keyword(s)
  • 3D-Integration

  • RF behavior

  • interconnect structure

  • interchip vias

  • modular modeling

  • embedding

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